IXTA26P10T Pricing (USD) [37786pcs Stock]
- 1 pcs$1.04228
- 200 pcs$1.03710
- Part Number:
- IXTA26P10T
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET P-CH 100V 26A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTA26P10T electronic components. IXTA26P10T can be shipped within 24 hours after order. If you have any demands for IXTA26P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA26P10T Product Attributes
Part Number :
IXTA26P10T
Manufacturer :
IXYS
Description :
MOSFET P-CH 100V 26A TO-263
Series :
TrenchP™
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
3820pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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