FQI8N60CTU Pricing (USD) [89832pcs Stock]
- 1 pcs$0.43527
- 1,000 pcs$0.32437
- Part Number:
- FQI8N60CTU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 7.5A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQI8N60CTU electronic components. FQI8N60CTU can be shipped within 24 hours after order. If you have any demands for FQI8N60CTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQI8N60CTU Product Attributes
Part Number :
FQI8N60CTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 7.5A I2PAK
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1255pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.13W (Ta), 147W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK (TO-262)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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