[1594pcs Stock]
- Part Number:
- TK4A53D(STA4,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 525V 4A TO-220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK4A53D(STA4,Q,M) electronic components. TK4A53D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK4A53D(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4A53D(STA4,Q,M) Product Attributes
Part Number :
TK4A53D(STA4,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 525V 4A TO-220SIS
Series :
π-MOSVII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
525V
Current - Continuous Drain (Id) @ 25°C :
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.7 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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