TPC8129,LQ(S Pricing (USD) [334182pcs Stock]
- 1 pcs$0.12236
- 2,500 pcs$0.12175
- Part Number:
- TPC8129,LQ(S
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 30V 9A 8SOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Special Purpose, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Power Driver Modules, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPC8129,LQ(S electronic components. TPC8129,LQ(S can be shipped within 24 hours after order. If you have any demands for TPC8129,LQ(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8129,LQ(S Product Attributes
Part Number :
TPC8129,LQ(S
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 30V 9A 8SOP
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds :
1650pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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