RSQ020N03TR Pricing (USD) [410451pcs Stock]
- 1 pcs$0.09962
- 3,000 pcs$0.09913
- Part Number:
- RSQ020N03TR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 30V 2A TSMT6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RSQ020N03TR electronic components. RSQ020N03TR can be shipped within 24 hours after order. If you have any demands for RSQ020N03TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RSQ020N03TR Product Attributes
Part Number :
RSQ020N03TR
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 2A TSMT6
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
134 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
3.1nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
600mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TSMT6 (SC-95)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
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