FQU1N60CTU Pricing (USD) [114050pcs Stock]
- 1 pcs$0.30058
- 10 pcs$0.26261
- 100 pcs$0.20261
- 500 pcs$0.15009
- 1,000 pcs$0.12007
- Part Number:
- FQU1N60CTU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 1A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQU1N60CTU electronic components. FQU1N60CTU can be shipped within 24 hours after order. If you have any demands for FQU1N60CTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU1N60CTU Product Attributes
Part Number :
FQU1N60CTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 1A IPAK
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 28W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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