STW28N60DM2 Pricing (USD) [25997pcs Stock]
- 1 pcs$2.67505
- 10 pcs$2.38771
- 100 pcs$1.95777
- 500 pcs$1.58529
- 1,000 pcs$1.33700
- Part Number:
- STW28N60DM2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 21A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW28N60DM2 electronic components. STW28N60DM2 can be shipped within 24 hours after order. If you have any demands for STW28N60DM2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW28N60DM2 Product Attributes
Part Number :
STW28N60DM2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 21A
Series :
MDmesh™ DM2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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