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  5. BAS316,H3F

Toshiba Semiconductor and Storage - BAS316,H3F

KEY Part #: K6458608

BAS316,H3F Pricing (USD) [3056256pcs Stock]

  • 1 pcs$0.01210
Part Number:
BAS316,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 100V 250MA USC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage BAS316,H3F electronic components. BAS316,H3F can be shipped within 24 hours after order. If you have any demands for BAS316,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS316,H3F Product Attributes

Part Number : BAS316,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 100V 250MA USC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 250mA
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 3ns
Current - Reverse Leakage @ Vr : 200nA @ 80V
Capacitance @ Vr, F : 0.35pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : USC
Operating Temperature - Junction : 150°C (Max)

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