BAS316,H3F Pricing (USD) [3056256pcs Stock]
- 1 pcs$0.01210
- Part Number:
- BAS316,H3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE GEN PURP 100V 250MA USC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage BAS316,H3F electronic components. BAS316,H3F can be shipped within 24 hours after order. If you have any demands for BAS316,H3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS316,H3F Product Attributes
Part Number :
BAS316,H3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE GEN PURP 100V 250MA USC
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
250mA
Voltage - Forward (Vf) (Max) @ If :
1.25V @ 150mA
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
3ns
Current - Reverse Leakage @ Vr :
200nA @ 80V
Capacitance @ Vr, F :
0.35pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
SC-76, SOD-323
Supplier Device Package :
USC
Operating Temperature - Junction :
150°C (Max)
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