BSO615NGHUMA1 Pricing (USD) [209768pcs Stock]
- 1 pcs$0.17633
- Part Number:
- BSO615NGHUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 60V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Diodes - Zener - Single, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSO615NGHUMA1 electronic components. BSO615NGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO615NGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO615NGHUMA1 Product Attributes
Part Number :
BSO615NGHUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 60V 2.6A 8SOIC
Series :
SIPMOS®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2.6A
Rds On (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
Power - Max :
2W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
PG-DSO-8
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