Manufacturer :
Diodes Incorporated
Description :
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.9A, 2.1A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-WDFN Exposed Pad
Supplier Device Package :
8-DFN (3x2)