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  5. FCP190N60E

ON Semiconductor - FCP190N60E

KEY Part #: K6397413

FCP190N60E Pricing (USD) [28083pcs Stock]

  • 1 pcs$1.33091
Part Number:
FCP190N60E
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - JFETs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FCP190N60E electronic components. FCP190N60E can be shipped within 24 hours after order. If you have any demands for FCP190N60E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP190N60E Product Attributes

Part Number : FCP190N60E
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V TO220-3
Series : SuperFET® II
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3175pF @ 25V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3

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