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  5. CDBJSC101200-G

Comchip Technology - CDBJSC101200-G

KEY Part #: K6430876

CDBJSC101200-G Pricing (USD) [13054pcs Stock]

  • 1 pcs$3.15720
Part Number:
CDBJSC101200-G
Manufacturer:
Comchip Technology
Detailed description:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 1200V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Comchip Technology CDBJSC101200-G electronic components. CDBJSC101200-G can be shipped within 24 hours after order. If you have any demands for CDBJSC101200-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJSC101200-G Product Attributes

Part Number : CDBJSC101200-G
Manufacturer : Comchip Technology
Description : DIODE SILICON CARBIDE POWER SCHO
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 10A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 10A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : 780pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2
Operating Temperature - Junction : -55°C ~ 175°C

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