RUM003N02T2L Pricing (USD) [982367pcs Stock]
- 1 pcs$0.04162
- 8,000 pcs$0.04142
- Part Number:
- RUM003N02T2L
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 20V 300MA VMT3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RUM003N02T2L electronic components. RUM003N02T2L can be shipped within 24 hours after order. If you have any demands for RUM003N02T2L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUM003N02T2L Product Attributes
Part Number :
RUM003N02T2L
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 20V 300MA VMT3
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
25pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
150mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
VMT3
Package / Case :
SOT-723
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