IXYS - IXFN27N80Q

KEY Part #: K6393637

IXFN27N80Q Pricing (USD) [3139pcs Stock]

  • 1 pcs$14.56169
  • 10 pcs$14.48924

Part Number:
IXFN27N80Q
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 800V 27A SOT-227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Power Driver Modules and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in IXYS IXFN27N80Q electronic components. IXFN27N80Q can be shipped within 24 hours after order. If you have any demands for IXFN27N80Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN27N80Q Product Attributes

Part Number : IXFN27N80Q
Manufacturer : IXYS
Description : MOSFET N-CH 800V 27A SOT-227B
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 320 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 520W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC