Vishay Semiconductor Diodes Division - MMBD6050-HE3-08

KEY Part #: K6458647

MMBD6050-HE3-08 Pricing (USD) [3481810pcs Stock]

  • 1 pcs$0.01121
  • 15,000 pcs$0.01115

Part Number:
MMBD6050-HE3-08
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 70V 200MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 200mA 4ns 500mA IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Thyristors - SCRs, Power Driver Modules and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division MMBD6050-HE3-08 electronic components. MMBD6050-HE3-08 can be shipped within 24 hours after order. If you have any demands for MMBD6050-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMBD6050-HE3-08 Product Attributes

Part Number : MMBD6050-HE3-08
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 70V 200MA SOT23
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 70V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23
Operating Temperature - Junction : 150°C (Max)

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