IPB180N04S4LH0ATMA1 Pricing (USD) [50039pcs Stock]
- 1 pcs$0.78140
- 1,000 pcs$0.66027
- Part Number:
- IPB180N04S4LH0ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH TO263-7.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - JFETs, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB180N04S4LH0ATMA1 electronic components. IPB180N04S4LH0ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N04S4LH0ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N04S4LH0ATMA1 Product Attributes
Part Number :
IPB180N04S4LH0ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH TO263-7
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (Max) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
24440pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-7-3
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)
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