DMN30H4D0LFDE-7 Pricing (USD) [432148pcs Stock]
- 1 pcs$0.08559
- 3,000 pcs$0.04774
- Part Number:
- DMN30H4D0LFDE-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 300V .55A 6UDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - JFETs, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN30H4D0LFDE-7 electronic components. DMN30H4D0LFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN30H4D0LFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN30H4D0LFDE-7 Product Attributes
Part Number :
DMN30H4D0LFDE-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 300V .55A 6UDFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.7V, 10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id :
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
187.3pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
630mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-DFN2020-6 (Type E)
Package / Case :
6-UDFN Exposed Pad
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