SSM3J35MFV,L3F Pricing (USD) [2750629pcs Stock]
- 1 pcs$0.01487
- 8,000 pcs$0.01479
- Part Number:
- SSM3J35MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 20V 0.1A VESM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J35MFV,L3F electronic components. SSM3J35MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J35MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J35MFV,L3F Product Attributes
Part Number :
SSM3J35MFV,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 0.1A VESM
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
12.2pF @ 3V
FET Feature :
-
Power Dissipation (Max) :
150mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
VESM
Package / Case :
SOT-723
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