Toshiba Semiconductor and Storage - TPH3300CNH,L1Q

KEY Part #: K6419905

TPH3300CNH,L1Q Pricing (USD) [143042pcs Stock]

  • 1 pcs$0.27156
  • 5,000 pcs$0.27021

Part Number:
TPH3300CNH,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 150V 18A 8-SOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - JFETs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPH3300CNH,L1Q electronic components. TPH3300CNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH3300CNH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
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ISO-28000-2007
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TPH3300CNH,L1Q Product Attributes

Part Number : TPH3300CNH,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 150V 18A 8-SOP
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 10.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 75V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta), 57W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN

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