IRFBA90N20DPBF Pricing (USD) [12988pcs Stock]
- 1 pcs$3.04524
- 10 pcs$2.74204
- 100 pcs$2.25462
- 500 pcs$1.88901
- 1,000 pcs$1.64526
- Part Number:
- IRFBA90N20DPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 98A SUPER-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - JFETs and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFBA90N20DPBF electronic components. IRFBA90N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFBA90N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBA90N20DPBF Product Attributes
Part Number :
IRFBA90N20DPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 98A SUPER-220
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 59A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6080pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
650W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
SUPER-220™ (TO-273AA)
Package / Case :
Super-220™-3 (Straight Leads)
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