Diodes Incorporated - DMTH10H010LCT

KEY Part #: K6392598

DMTH10H010LCT Pricing (USD) [51668pcs Stock]

  • 1 pcs$0.71495
  • 50 pcs$0.57489
  • 100 pcs$0.51740
  • 500 pcs$0.40242
  • 1,000 pcs$0.31541

Part Number:
DMTH10H010LCT
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 100V 108A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Power Driver Modules, Diodes - Rectifiers - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH10H010LCT electronic components. DMTH10H010LCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010LCT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH10H010LCT Product Attributes

Part Number : DMTH10H010LCT
Manufacturer : Diodes Incorporated
Description : MOSFET 100V 108A TO220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 53.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2592pF @ 50V
FET Feature : -
Power Dissipation (Max) : 2.4W (Ta), 166W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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