FDI045N10A-F102 Pricing (USD) [20242pcs Stock]
- 1 pcs$2.03603
- Part Number:
- FDI045N10A-F102
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 120A I2PAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDI045N10A-F102 electronic components. FDI045N10A-F102 can be shipped within 24 hours after order. If you have any demands for FDI045N10A-F102, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDI045N10A-F102 Product Attributes
Part Number :
FDI045N10A-F102
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 120A I2PAK-3
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5270pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
263W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK (TO-262)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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