IRFBC30ASPBF Pricing (USD) [45397pcs Stock]
- 1 pcs$0.75258
- 10 pcs$0.67858
- 100 pcs$0.54533
- 500 pcs$0.42415
- 1,000 pcs$0.33245
- Part Number:
- IRFBC30ASPBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 3.6A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFBC30ASPBF electronic components. IRFBC30ASPBF can be shipped within 24 hours after order. If you have any demands for IRFBC30ASPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBC30ASPBF Product Attributes
Part Number :
IRFBC30ASPBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 3.6A D2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
74W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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