Vishay Semiconductor Diodes Division - SS3H10HE3_B/I

KEY Part #: K6427389

SS3H10HE3_B/I Pricing (USD) [333539pcs Stock]

  • 1 pcs$0.11089

Part Number:
SS3H10HE3_B/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 100V 3A DO214AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Thyristors - TRIACs and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division SS3H10HE3_B/I electronic components. SS3H10HE3_B/I can be shipped within 24 hours after order. If you have any demands for SS3H10HE3_B/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SS3H10HE3_B/I Product Attributes

Part Number : SS3H10HE3_B/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 100V 3A DO214AB
Series : Automotive, AEC-Q100
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 800mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 20µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -65°C ~ 175°C

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