DMN2015UFDE-7 Pricing (USD) [434437pcs Stock]
- 1 pcs$0.08514
- 3,000 pcs$0.04424
- Part Number:
- DMN2015UFDE-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V 10.5A U-DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN2015UFDE-7 electronic components. DMN2015UFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN2015UFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2015UFDE-7 Product Attributes
Part Number :
DMN2015UFDE-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V 10.5A U-DFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
11.6 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45.6nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1779pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
660mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-DFN2020-6 (Type E)
Package / Case :
6-PowerUDFN
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