EPC - EPC2019

KEY Part #: K6417174

EPC2019 Pricing (USD) [53015pcs Stock]

  • 1 pcs$0.81534
  • 1,000 pcs$0.81128

Part Number:
EPC2019
Manufacturer:
EPC
Detailed description:
GAN TRANS 200V 8.5A BUMPED DIE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in EPC EPC2019 electronic components. EPC2019 can be shipped within 24 hours after order. If you have any demands for EPC2019, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2019 Product Attributes

Part Number : EPC2019
Manufacturer : EPC
Description : GAN TRANS 200V 8.5A BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 7A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die