Vishay Siliconix - SQJ912BEP-T1_GE3

KEY Part #: K6525259

SQJ912BEP-T1_GE3 Pricing (USD) [152759pcs Stock]

  • 1 pcs$0.24213

Part Number:
SQJ912BEP-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH DUAL 40V PPSO-8L.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SQJ912BEP-T1_GE3 electronic components. SQJ912BEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ912BEP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ912BEP-T1_GE3 Product Attributes

Part Number : SQJ912BEP-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH DUAL 40V PPSO-8L
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Rds On (Max) @ Id, Vgs : 11 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 25V
Power - Max : 48W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual