Vishay Semiconductor Diodes Division - BAW27-TR

KEY Part #: K6455312

BAW27-TR Pricing (USD) [3340050pcs Stock]

  • 1 pcs$0.01107
  • 50,000 pcs$0.00930

Part Number:
BAW27-TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAW27-TR electronic components. BAW27-TR can be shipped within 24 hours after order. If you have any demands for BAW27-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW27-TR Product Attributes

Part Number : BAW27-TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 60V 600MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 60V
Current - Average Rectified (Io) : 600mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 400mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 6ns
Current - Reverse Leakage @ Vr : 100nA @ 60V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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