Vishay Semiconductor Diodes Division - VS-2EFH02HM3/I

KEY Part #: K6455323

VS-2EFH02HM3/I Pricing (USD) [625017pcs Stock]

  • 1 pcs$0.05918
  • 10,000 pcs$0.05147
  • 30,000 pcs$0.05083

Part Number:
VS-2EFH02HM3/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rct 2A 200V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-2EFH02HM3/I electronic components. VS-2EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFH02HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EFH02HM3/I Product Attributes

Part Number : VS-2EFH02HM3/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 2A DO219AB
Series : Automotive, AEC-Q101, FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 950mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -65°C ~ 175°C

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