RRH090P03TB1 Pricing (USD) [167001pcs Stock]
- 1 pcs$0.24485
- 2,500 pcs$0.24363
- Part Number:
- RRH090P03TB1
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET P-CH 30V 9A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RRH090P03TB1 electronic components. RRH090P03TB1 can be shipped within 24 hours after order. If you have any demands for RRH090P03TB1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RRH090P03TB1 Product Attributes
Part Number :
RRH090P03TB1
Manufacturer :
Rohm Semiconductor
Description :
MOSFET P-CH 30V 9A 8SOIC
Series :
-
Part Status :
Not For New Designs
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
15.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
650mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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