IPD65R1K4CFDBTMA1 Pricing (USD) [183123pcs Stock]
- 1 pcs$0.20198
- 2,500 pcs$0.16494
- Part Number:
- IPD65R1K4CFDBTMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 2.8A TO-252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPD65R1K4CFDBTMA1 electronic components. IPD65R1K4CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R1K4CFDBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R1K4CFDBTMA1 Product Attributes
Part Number :
IPD65R1K4CFDBTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 2.8A TO-252
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
262pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
28.4W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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