Vishay Semiconductor Diodes Division - BYWB29-100HE3/45

KEY Part #: K6456525

BYWB29-100HE3/45 Pricing (USD) [128710pcs Stock]

  • 1 pcs$0.28737
  • 1,000 pcs$0.26162

Part Number:
BYWB29-100HE3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 25ns Single Glass Pass
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYWB29-100HE3/45 electronic components. BYWB29-100HE3/45 can be shipped within 24 hours after order. If you have any demands for BYWB29-100HE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWB29-100HE3/45 Product Attributes

Part Number : BYWB29-100HE3/45
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 8A TO263AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -65°C ~ 150°C

You May Also Be Interested In
  • DSEP8-03AS

    IXYS

    DIODE GEN PURP 300V 8A TO252AA.

  • VS-16EDH02HM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 16A TO263AC. Rectifiers Single 16A 200V FRED Pt AEC-Q101

  • UGB8JTHE3/45

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8.0A 600 Volt 25ns 65 Amp IFSM

  • UGB8HTHE3/45

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 500V 8A TO263AB. Rectifiers 8.0A 500 Volt 25ns Dual 65 Amp IFSM

  • UGB8BT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 20ns 150 Amp IFSM

  • UGB8CT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 8A TO263AB. Rectifiers 150 Volt 8.0A 20ns 150 Amp IFSM