FQP55N10 Pricing (USD) [36674pcs Stock]
- 1 pcs$0.71495
- 10 pcs$0.63468
- 100 pcs$0.50151
- 500 pcs$0.38894
- 1,000 pcs$0.29046
- Part Number:
- FQP55N10
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 55A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQP55N10 electronic components. FQP55N10 can be shipped within 24 hours after order. If you have any demands for FQP55N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP55N10 Product Attributes
Part Number :
FQP55N10
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 55A TO-220
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2730pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
155W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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