Diodes Incorporated - DMTH32M5LPSQ-13

KEY Part #: K6396230

DMTH32M5LPSQ-13 Pricing (USD) [156698pcs Stock]

  • 1 pcs$0.23604

Part Number:
DMTH32M5LPSQ-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 25V-30V POWERDI506.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Thyristors - TRIACs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH32M5LPSQ-13 electronic components. DMTH32M5LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH32M5LPSQ-13, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
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ISO-28000-2007
ISO-45001-2018

DMTH32M5LPSQ-13 Product Attributes

Part Number : DMTH32M5LPSQ-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 25V-30V POWERDI506
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 3944pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.2W (Ta), 100W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI5060-8
Package / Case : 8-PowerTDFN