SCT2H12NYTB Pricing (USD) [25402pcs Stock]
- 1 pcs$1.79360
- 400 pcs$1.78468
- Part Number:
- SCT2H12NYTB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- 1700V 1.2 OHM 4A SIC FET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - RF, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor SCT2H12NYTB electronic components. SCT2H12NYTB can be shipped within 24 hours after order. If you have any demands for SCT2H12NYTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT2H12NYTB Product Attributes
Part Number :
SCT2H12NYTB
Manufacturer :
Rohm Semiconductor
Description :
1700V 1.2 OHM 4A SIC FET
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1700V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id :
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 18V
Vgs (Max) :
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds :
184pF @ 800V
FET Feature :
-
Power Dissipation (Max) :
44W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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