Rohm Semiconductor - SCT2H12NYTB

KEY Part #: K6402965

SCT2H12NYTB Pricing (USD) [25402pcs Stock]

  • 1 pcs$1.79360
  • 400 pcs$1.78468

Part Number:
SCT2H12NYTB
Manufacturer:
Rohm Semiconductor
Detailed description:
1700V 1.2 OHM 4A SIC FET.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - RF, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Rohm Semiconductor SCT2H12NYTB electronic components. SCT2H12NYTB can be shipped within 24 hours after order. If you have any demands for SCT2H12NYTB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SCT2H12NYTB Product Attributes

Part Number : SCT2H12NYTB
Manufacturer : Rohm Semiconductor
Description : 1700V 1.2 OHM 4A SIC FET
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1700V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 18V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id : 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 18V
Vgs (Max) : +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds : 184pF @ 800V
FET Feature : -
Power Dissipation (Max) : 44W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268
Package / Case : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA