Part Number :
SCT2H12NYTB
Manufacturer :
Rohm Semiconductor
Description :
1700V 1.2 OHM 4A SIC FET
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1700V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id :
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds :
184pF @ 800V
Power Dissipation (Max) :
44W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA