IRF60B217 Pricing (USD) [54371pcs Stock]
- 1 pcs$0.78185
- 10 pcs$0.69112
- 100 pcs$0.54625
- 500 pcs$0.42364
- 1,000 pcs$0.31637
- Part Number:
- IRF60B217
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 60A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - RF, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF60B217 electronic components. IRF60B217 can be shipped within 24 hours after order. If you have any demands for IRF60B217, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF60B217 Product Attributes
Part Number :
IRF60B217
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 60A
Series :
StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2230pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
83W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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