Vishay Semiconductor Diodes Division - BAV19-TAP

KEY Part #: K6439528

BAV19-TAP Pricing (USD) [5313718pcs Stock]

  • 1 pcs$0.00735
  • 50,000 pcs$0.00731

Part Number:
BAV19-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 250MA DO35. Diodes - General Purpose, Power, Switching 120 Volt 625mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Transistors - IGBTs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAV19-TAP electronic components. BAV19-TAP can be shipped within 24 hours after order. If you have any demands for BAV19-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19-TAP Product Attributes

Part Number : BAV19-TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 250MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 100nA @ 100V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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