IXFE73N30Q Pricing (USD) [4360pcs Stock]
- 1 pcs$10.48289
- 10 pcs$10.43074
- Part Number:
- IXFE73N30Q
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 300V 66A SOT-227B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in IXYS IXFE73N30Q electronic components. IXFE73N30Q can be shipped within 24 hours after order. If you have any demands for IXFE73N30Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFE73N30Q Product Attributes
Part Number :
IXFE73N30Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 300V 66A SOT-227B
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
46 mOhm @ 36.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
400W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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