[12670pcs Stock]
- Part Number:
- IRFBC20S
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 2.2A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFBC20S electronic components. IRFBC20S can be shipped within 24 hours after order. If you have any demands for IRFBC20S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBC20S Product Attributes
Part Number :
IRFBC20S
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 2.2A D2PAK
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.4 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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