Description :
MOSFET N/P-CH
FET Type :
N and P-Channel, Common Drain
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
54A (Tc), 62A (Tc)
Rds On (Max) @ Id, Vgs :
24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA, 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V, 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1370pF @ 25V, 5080pF @ 25V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
ISOPLUSi5-Pak™
Supplier Device Package :
ISOPLUS i4-PAC™