Description :
GAN TRANS ASYMMETRICAL HALF BRID
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
16A (Ta)
Rds On (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die