Vishay Siliconix - SQ4949EY-T1_GE3

KEY Part #: K6522960

SQ4949EY-T1_GE3 Pricing (USD) [112388pcs Stock]

  • 1 pcs$0.32910

Part Number:
SQ4949EY-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2 P-CH 30V 7.5A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ4949EY-T1_GE3 electronic components. SQ4949EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4949EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4949EY-T1_GE3 Product Attributes

Part Number : SQ4949EY-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2 P-CH 30V 7.5A 8SOIC
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.5A (Tc)
Rds On (Max) @ Id, Vgs : 35 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1020pF @ 25V
Power - Max : 3.3W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC

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