IXFN62N80Q3 Pricing (USD) [2165pcs Stock]
- 1 pcs$22.99358
- 10 pcs$21.50407
- 100 pcs$18.64518
- Part Number:
- IXFN62N80Q3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 800V 49A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Diodes - RF, Transistors - Bipolar (BJT) - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXFN62N80Q3 electronic components. IXFN62N80Q3 can be shipped within 24 hours after order. If you have any demands for IXFN62N80Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN62N80Q3 Product Attributes
Part Number :
IXFN62N80Q3
Manufacturer :
IXYS
Description :
MOSFET N-CH 800V 49A SOT-227
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
140 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
960W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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