CSD13381F4T Pricing (USD) [608228pcs Stock]
- 1 pcs$0.06081
- 250 pcs$0.05023
- 1,250 pcs$0.02326
- Part Number:
- CSD13381F4T
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 12V 2.1A 3PICOSTAR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD13381F4T electronic components. CSD13381F4T can be shipped within 24 hours after order. If you have any demands for CSD13381F4T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13381F4T Product Attributes
Part Number :
CSD13381F4T
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 12V 2.1A 3PICOSTAR
Series :
FemtoFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 4.5V
Vgs (Max) :
8V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-PICOSTAR
Package / Case :
3-XFDFN
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