[12957pcs Stock]
- Part Number:
- ZXM66P03N8TA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET P-CH 30V 7.9A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXM66P03N8TA electronic components. ZXM66P03N8TA can be shipped within 24 hours after order. If you have any demands for ZXM66P03N8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXM66P03N8TA Product Attributes
Part Number :
ZXM66P03N8TA
Manufacturer :
Diodes Incorporated
Description :
MOSFET P-CH 30V 7.9A 8-SOIC
Series :
-
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1979pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.56W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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