IPSA70R600CEAKMA1 Pricing (USD) [85799pcs Stock]
- 1 pcs$0.45573
- 1,500 pcs$0.15871
- Part Number:
- IPSA70R600CEAKMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 700V 10.5A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPSA70R600CEAKMA1 electronic components. IPSA70R600CEAKMA1 can be shipped within 24 hours after order. If you have any demands for IPSA70R600CEAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPSA70R600CEAKMA1 Product Attributes
Part Number :
IPSA70R600CEAKMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 700V 10.5A IPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
700V
Current - Continuous Drain (Id) @ 25°C :
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
474pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
86W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO251-3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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