Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 250V 30A TO-3PN
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 10V
Power Dissipation (Max) :
90W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P(N)IS
Package / Case :
TO-3P-3, SC-65-3