Toshiba Semiconductor and Storage - 2SK2995(F)

KEY Part #: K6413245

[13167pcs Stock]


    Part Number:
    2SK2995(F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET N-CH 250V 30A TO-3PN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage 2SK2995(F) electronic components. 2SK2995(F) can be shipped within 24 hours after order. If you have any demands for 2SK2995(F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SK2995(F) Product Attributes

    Part Number : 2SK2995(F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET N-CH 250V 30A TO-3PN
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 250V
    Current - Continuous Drain (Id) @ 25°C : 30A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 68 mOhm @ 15A, 10V
    Vgs(th) (Max) @ Id : 3.5V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 132nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 5400pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 90W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-3P(N)IS
    Package / Case : TO-3P-3, SC-65-3

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