Vishay Semiconductor Diodes Division - BAS21-HE3-18

KEY Part #: K6458583

BAS21-HE3-18 Pricing (USD) [2706842pcs Stock]

  • 1 pcs$0.01366
  • 10,000 pcs$0.01264

Part Number:
BAS21-HE3-18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching 250 Volt 625mA 50ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAS21-HE3-18 electronic components. BAS21-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAS21-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS21-HE3-18 Product Attributes

Part Number : BAS21-HE3-18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 200MA SOT23
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 200mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 100nA @ 200V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23
Operating Temperature - Junction : -55°C ~ 150°C

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