Part Number :
SCT2H12NZGC11
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 1700V 3.7A
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1700V
Current - Continuous Drain (Id) @ 25°C :
3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id :
4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds :
184pF @ 800V
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PFM
Package / Case :
TO-3PFM, SC-93-3