SIS888DN-T1-GE3 Pricing (USD) [120687pcs Stock]
- 1 pcs$0.30647
- 3,000 pcs$0.28779
- Part Number:
- SIS888DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 150V 20.2A 1212-8S.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIS888DN-T1-GE3 electronic components. SIS888DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS888DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS888DN-T1-GE3 Product Attributes
Part Number :
SIS888DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 150V 20.2A 1212-8S
Series :
ThunderFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
58 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
52W (Tc)
Operating Temperature :
-55°C ~ 150°C (TA)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8S (3.3x3.3)
Package / Case :
PowerPAK® 1212-8S
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